PART |
Description |
Maker |
BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS) From old datasheet system HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
BAS21U BAS21 BAS21-03W |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BAV99HMFH |
Switching Diode (High speed switching) (corresponds to AEC-Q101)
|
ROHM
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
GBAV151 |
The GBAV151 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
Q62702-A1030 BAV70W |
From old datasheet system SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group SIEMENS AG
|
RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp. Micro Commercial Components Corp.
|